october 2016 docid029726 rev 2 1 / 9 this is information on a product in full production. www.st.com tn3050h - 12wy 30 a - 1200 v automotive grade scr thyristor datasheet - production data features ? aec - q101 qualified ? high junction temperature: t j = 150 c ? ac off state voltage: +/ - 1200 v ? nominal on - state current: 30 a rms ? high noise immunity: 1000 v/s ? max. gate triggering current: 50 ma ? ecopack ? 2 compliant component applications ? automotive appl ications: on board and off board battery charger ? renewable energy inverters ? solid state relay ? 3 - phase heating or motor soft start control ? ups (uninterruptible power supply) ? bypass ssr / hybrid relay ? inrush current limiter in battery charger ? ac - dc voltage c ontrolled rectifier ? industrial welding systems description this device is an automotive grade scr thyristor designed for applications such as automotive and stationary batter y chargers. this scr thyristor, rated for a 30 a rms power switching, offers superior performances in peak voltage robustness up to 1400 v and surge current handling up to 300 a sine wave pulse. its key features allow the design of functions such as a 42 a rms ac switch (dual back - to - back scrs) and a 38 a av. ac - dc controlled rectifier bridge. available in through - hole to - 247 package, this power package allows a thermal operation up to 30 a rms with a higher case temperature of 126 c. table 1: device summary symbol value i t(rms) 30 a v drm /v rrm 1200 v v dsm /v rsm 1400 v i gt 50 ma t j 150 c t o - 2 4 7 u n i n s u l a t e d k a g a g k t a b = a
characteristics tn3050h - 12wy 2 / 9 docid029726 rev 2 1 characteristics table 2: absolute ratings (limiting values) symbol parameter value unit i t(rms) rms on - state current (180 conduction angle) t c = 126 c 30 a i t(av) average on - state current (180 conduction angle) 19 a i tsm (1) non repetitive surge peak on - state current t p = 8.3 ms t j initial = 25 c 330 a t p = 10 ms 300 v drm / v rrm repetitive off - state voltage (50 - 60 hz) t j = 150 c 1200 v dl/dt critical rate of rise of on - state current i g = 2 x i gt , tr 100 ns f = 50 hz t j = 150 c 200 a/s i gm peak forward gate current t p = 20 s t j = 150 c 8 a p g(av) average gate power dissipation t j = 150 c 1 w t stg storage junction temperature range - 40 to +150 c t j operating junction temperature - 40 to +150 c notes: (1) st recommend i2t value for fusing = 450 a2s for t j = 25 c and t p = 10 ms table 3: electrical characteristics (t j = 25 c unless otherwise specified) symbol test conditions value unit i gt v d = 12 v, r l = 33 min. 10 ma max. 50 v gt v d = 12 v, r l = 33 max. 1.3 v v gd v d = 2/3 x v drm , r l = 3.3 k t j = 150 c min. 0.2 v i h i t = 500 ma, gate open max. 100 ma i l i g = 1.2 x i gt max. 125 ma t gt i t = 60 a , v d = 2/3 x v drm , i g = 100 ma, di g /dt = 0.2 a/s typ. 1 s dv/dt v d = 2/3 x v drm , gate open t j = 150 c min. 1000 v/s t q i t = 20 a, di t /dt = 10 a/s, v r = 75 v, v d = 2/3 x v drm , dv d /dt = 20 v/s, t p = 100 s t j = 150 c typ. 150 s v tm i tm = 60 a, t p = 380 s max. 1.65 v v to threshold voltage t j = 150 c max. 0.88 v r d dynamic resistance t j = 150 c max. 14 m i drm /i rrm v d = v drm , v r = v rrm t j = 25 c max. 5 a t j = 125 c max. 3 ma t j = 150 c max. 5 ma i dsm /i rsm v d = v dsm , v r = v rsm t j = 25 c max. 10 a
tn3050h - 12wy characteristics docid029726 rev 2 3 / 9 table 4: thermal parameters symbol parameter value unit r th(j - c) junction to case (dc, max.) to - 247 0.8 c/w r th(j - a) junction to ambient (typ.) 50
characteristics tn3050h - 12wy 4 / 9 docid029726 rev 2 1.1 characteristics (curves) figure 1 : maximum average power dissipation versus average on - state current figure 2 : average and dc on - state current versus case temperature figure 3 : on - state characteristics (maximum values) figure 4 : average and d.c. on - state current versus ambient temperature figure 5 : relative variation of thermal impedance junction to case and junction to ambient versus pulse duration figure 6 : surge peak on - state current versus number of cycles 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 1 1 0 1 0 0 1 0 0 0 n u m b e r o f c y c l e s n o n r e p e t i t i v e , t j i n i t i a l = 2 5 c r e p e t i t i v e , t c = 1 2 6 c i t s m ( a ) 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 t a ( c ) d c = 1 8 0 i t ( a v ) ( a ) k = [ z t h / r t h ] 1 . 0 e - 0 3 1 . 0 e - 0 2 1 . 0 e - 0 1 1 . 0 e + 0 0 1 . 0 e - 0 3 1 . 0 e - 0 2 1 . 0 e - 0 1 1 . 0 e + 0 0 1 . 0 e + 0 1 1 . 0 e + 0 2 1 . 0 e + 0 3 t p ( s ) z t h ( j - a ) z t h ( j - c ) 0 5 1 0 1 5 2 0 2 5 3 0 0 5 1 0 1 5 2 0 2 5 i t ( a v ) ( a ) p ( w ) = 3 0 = 6 0 = 9 0 = 1 2 0 = 1 8 0 d . c 0 5 1 0 1 5 2 0 2 5 3 0 3 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 t c ( c ) d . c = 1 8 0 = 3 0 = 6 0 = 9 0 = 1 2 0 i t ( a v ) ( a ) 1 1 0 1 0 0 1 0 0 0 0 . 0 1 . 0 2 . 0 3 . 0 4 . 0 v t m ( v ) a t t j m a x : v t o = 0 . 8 8 v r d = 1 4 m ? t j = 2 5 c t j = 1 5 0 c i t m ( a )
tn3050h - 12wy characteristics docid029726 rev 2 5 / 9 figure 7 : non repetitive surge peak on - state current for a sinusoidal pulse (t p < 10 ms) figure 8 : relative variation of holding and latching current versus junction temperature (typical values) figure 9 : rel ative variation of gate triggering current and voltage versus junction temperature figure 10 : relative variation of the static dv/dt immunity versus junction temperature (typical values) figure 11 : relative variation of leakage current versus junction temperature for different values of blocking voltage 0 1 2 3 4 5 6 7 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 t j ( c ) v d = 0 . 6 7 x v d r m d v / d t [ t j ] / d v / d t [ t j = 1 5 0 c ] 0 . 3 0 . 5 0 . 8 1 . 0 1 . 3 1 . 5 1 . 8 2 . 0 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 i h , i l [ t j ] / i h , i l [ t j = 2 5 c ] i h i l t j ( c ) 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 i g t , v g t [ t j ] / i g t , v g t [ t j = 2 5 c ] i g t v g t t j ( c )
package information tn3050h - 12wy 6 / 9 docid029726 rev 2 2 package information in order to meet environmental requirements, st of fers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. ? epoxy meets ul 94,v0 ? recommended torque value: 0.8 nm ? maximum torque value: 1 nm 2.1 to - 247 package information figure 12 : to - 247 package outline
tn3050h - 12wy package information docid029726 rev 2 7 / 9 table 5: to - 247 package mechanical data dim. dimensions millimeters inches (1) min. typ. max. min. typ. max. a 4.85 5.15 0.1909 0.2028 a1 2.20 2.60 0.0866 0.1024 b 1.0 1.40 0.0394 0.0551 b1 2.0 2.40 0.0787 0.0945 b2 3.0 3.40 0.1181 0.1339 c 0.40 0.80 0.0157 0.0315 d (2) 19.85 20.15 0.7815 0.7933 e 15.45 15.75 0.6083 0.6201 e 5.30 5.45 5.60 0.2087 0.2146 0.2205 l 14.20 14.80 0.5591 0.5827 l1 3.70 4.30 0.1457 0.1693 l2 18.50 0.7283 ?p (3) 3.55 3.65 0.1398 0.1437 ?r 4.50 5.50 0.1772 0.2165 s 5.30 5.50 5.70 0.2087 0.2165 0.2244 notes: (1) inch dimensions given only for reference (2) dimension d plus gate protrusion does not exceed 20.5 mm (3) resin thickness around the mounting hole is not less than 0.9 mm
ordering information tn3050h - 12wy 8 / 9 docid029726 rev 2 3 ordering information table 6: ordering information order code marking package weight base qty. delivery mode tn3050h - 12wy tn3050h12wy to - 247 4.4 g 50 tube 4 revision history table 7: document revision history date revision changes 16 - sep - 2016 1 initial release. 03 - oct - 2016 2 updated table 4: "thermal parameters" .
tn3050h - 12wy docid029726 rev 2 9 / 9 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers s hould obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, select ion, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved
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